BUZ31 E3045A

BUZ 31 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Normal Level Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Pb-free BUZ 31 200 V 14.5 A 0.2 Ω PG-TO-220-3 Yes S Maximum Ratings Parameter Symbol Continuous drain current ID TC = 30 ˚C Pulsed drain current Values Unit A 14.5 IDpuls TC = 25 ˚C 58 Avalanche current,limited by Tjmax IAR Avalanche energy,periodic limited by Tjmax EAR Avalanche energy, single pulse EAS 13.5 9 mJ ID = 14.5 A, VDD = 50 V, RGS = 25 Ω L = 1.42 mH, Tj = 25 ˚C Gate source voltage 200 VGS ESD-Sensitivity HBM as per MIL-STD 883 Power dissipation ± 20 Class 1 Ptot TC = 25 ˚C W 95 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 1.32 Thermal resistance, chip to ambient RthJA 75 ˚C K/W E DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Rev. 2.4 V 55 / 150 / 56 Page 1 2009-04-07 BUZ 31 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage 200 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS µA VDS = 200 V, VGS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 200 V, VGS = 0 V, Tj = 125 ˚C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 5 V, ID = 9 A Rev. 2.4 nA - Page 2 0.16 0.2 2009-04-07 BUZ 31 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs S VDS≥ 2 * ID * RDS(on)max, ID = 7 A Input capacitance 5 - 840 1120 - 180 270 - 95 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time pF Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance 12 150 td(on) ns VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Rise time - 12 20 - 50 75 - 150 200 - 60 80 tr VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Rev. 2.4 Page 3 2009-04-07 BUZ 31 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 ˚C Inverse diode direct current,pulsed - - 58 V 1.1 1.6 trr ns - 170 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/µs Rev. 2.4 14.5 - VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 29A Reverse recovery time - ISM TC = 25 ˚C Inverse diode forward voltage A µC - Page 4 1.1 - 2009-04-07 BUZ 31 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 100 14 W A 12 Ptot 80 ID 11 10 70 9 60 8 50 7 6 40 5 30 4 3 20 2 10 1 0 0 0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 TC ˚C 160 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 2 10 1 tp = 15.0µs D K/W DS /I A = V ID ZthJC 10 0 DS (o n) 100 µs R 10 1 1 ms 10 -1 D = 0.50 10 ms 0.20 10 0 0.10 0.05 10 -2 0.02 DC 0.01 single pulse 10 -1 10 0 10 1 10 10 2 V 10 VDS Rev. 2.4 -3 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Page 5 2009-04-07 BUZ 31 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 32 l Ptot = 95W Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0.65 kj i h Ω g A ID e 20 16 d 12 c 8 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 l 20.0 2 4 6 8 10 d e 0.45 0.40 0.35 0.30 f 0.25 g h 0.20 i j 0.15 k 0.10 V [V] = GS 0.05 a 0 0 c RDS (on) 0.50 b 4 b 0.55 VGS [V] 4.0 f a 24 a V 0.00 0 13 a 4.5 4.0 b 5.0 c 5.5 4 d 6.0 e f 6.5 7.0 8 12 g 7.5 h i j k 8.0 9.0 10.0 20.0 16 20 A VDS 28 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max VDS≥2 x ID x RDS(on)max 13 16 S A ID 11 gfs 12 10 9 10 8 7 8 6 5 6 4 4 3 2 2 1 0 0 1 2 3 4 5 6 7 8 V 0 0 10 VGS Rev. 2.4 2 4 6 8 10 12 A 16 ID Page 6 2009-04-07 BUZ 31 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 9 A, VGS = 10 V 0.75 4.6 Ω V 0.65 4.0 VGS(th) RDS (on)0.60 0.55 98% 3.6 typ 3.2 0.50 2.8 0.45 0.40 2.4 0.35 2% 2.0 0.30 98% 0.25 typ 1.6 0.20 1.2 0.15 0.8 0.10 0.4 0.05 0.00 -60 -20 20 60 100 ˚C 0.0 -60 160 -20 20 60 100 ˚C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 2 pF A IF C 10 3 10 1 Ciss Coss 10 2 10 0 Crss Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 1 0 5 10 15 20 25 30 V 10 -1 0.0 40 Rev. 2.4 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD VDS Page 7 2009-04-07 BUZ 31 Avalanche energy EAS = ƒ(Tj) parameter: ID = 14.5 A, VDD = 50 V RGS = 25 Ω, L = 1.42 mH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 20 A 16 220 mJ V EAS 180 VGS 160 140 12 10 0,2 VDS max 120 0,8 VDS max 8 100 6 80 60 4 40 2 20 0 20 40 60 80 100 120 ˚C 0 0 160 Tj 10 20 30 40 50 60 70 90 QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Rev. 2.4 Page 8 2009-04-07 BUZ 31 Rev. 2.4 Page 9 2009-04-07 BUZ 31 Rev. 2.4 Page 10 2009-04-07